The authors are grateful to the support by the Ministry of Science and Technology (Grant No 2006CB0N0401), National Science Foundation of China (Grant Nos 10434010 and 90606026), and the Chinese Ministry of Education (Grant No 10401).
Quantitative Analysis of Current–Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects†
Article first published online: 2 AUG 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 17, Issue 14, pages 2478–2489, September, 2007
How to Cite
Zhang, Z., Yao, K., Liu, Y., Jin, C., Liang, X., Chen, Q. and Peng, L.-M. (2007), Quantitative Analysis of Current–Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects. Adv. Funct. Mater., 17: 2478–2489. doi: 10.1002/adfm.200600475
- Issue published online: 18 SEP 2007
- Article first published online: 2 AUG 2007
- Manuscript Revised: 26 OCT 2006
- Manuscript Received: 1 JUN 2006
- Ministry of Science and Technology. Grant Number: 2006CB0N0401
- National Science Foundation of China. Grant Numbers: 10434010, 90606026
- Chinese Ministry of Education. Grant Number: 10401
A metal-semiconductor-metal (M-S-M) model for quantitative analysis of current–voltage (I–V) characteristics of semiconducting nanowires is described and applied to fit experimental I–V curves of Bi2S3 nanowire transistors. The I–V characteristics of semiconducting nanowires are found to depend sensitively on the contacts, in particular on the Schottky barrier height and contact area, and the M-S-M model is shown to be able to reproduce all experimentally observed I–V characteristics using only few fitting variables. A procedure for decoupling contact effects from that of the intrinsic parameters of the semiconducting nanowires, such as conductivity, carrier mobility and doping concentration is proposed, demonstrated using experimental I–V curves obtained from Bi2S3 nanowires and compared with the field-effect based method.