Solution-Processed HafSOx and ZircSOx Inorganic Thin-Film Dielectrics and Nanolaminates

Authors


  • We acknowledge the Center for Advanced Materials Characterization in Oregon for assistance with thin-film analyses. The JY 2000, ICPAES spectrometer used in this work was acquired through a grant from the US National Science Foundation, DUE-9651245. The work was supported by funds to D.A.K. and J.F.W. from the Hewlett Packard Company. T.M.P. was supported as an IGERT fellow through the National Science Foundation under Grant No. 0114419.

Abstract

New thin-film dielectrics and nanolaminates have been synthesized via aqueous-solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives. X-ray reflectivity, imaging, and metal-insulator-metal capacitor performance reveal that smooth, atomically dense films are readily produced by spin coating and modest thermal treatment (T < 325 °C). Dielectric characteristics include permittivities covering the range of 9–12 with breakdown fields up to 6 MV cm–1. Performance as gate dielectrics is demonstrated in field-effect transistors exhibiting small gate-leakage currents and qualitatively ideal device performance. The low-temperature processing, uniformity, and pore-free nature of the films have also allowed construction of unique, high-resolution nanolaminates exhibiting individual layers as thin as 3 nm.

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