Organic Light-Emitting Transistors Containing a Laterally Arranged Heterojunction

Authors

  • C. A. Di,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • G. Yu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • Y. Q. Liu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • X. J. Xu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • D. C. Wei,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • Y. B. Song,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • Y. M. Sun,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • Y. Wang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • D. B. Zhu

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • This work is supported by the National Natural Science Foundation of China (20573115, 90206049, 20472089, 20421101, 60671047, 50673093), the Major State Basic Research Development Program, and the Chinese Academy of Sciences.

Abstract

An approach to produce organic light-emitting transistors (OLETs) containing a laterally arranged heterojunction structure, which minimizes exciton quenching at the metal electrodes, is described. This device configuration provides an organic light-emitting diode (OLED) structure where the anode (source) electrode, hole-transport material (field-effect material), light-emitting material, and cathode (drain) electrode are laterally arranged, thus offering a chance to control the electroluminescent intensity by changing the gate bias. Pentacene and tris(8-quinolinolato)aluminum (Alq3) are employed as the field-effect and light-emitting materials, respectively. The laterally arranged heterojunction structures are achieved by successively inclined deposition of the field-effect and light-emitting materials. After deposition of pentacene, a narrow gap of about 10–20 nm between the drain electrode and pentacene was obtained, thereby creating an opportunity to fabricate a laterally arranged heterojunction. In the OLETs, unsymmetrical source and drain electrodes, that is, Au and LiF/Al ones, are used to ensure efficient injection of holes and electrons. Visible-light emission from OLETs is observed under ambient atmosphere. This result is ascribed to efficient carrier injection and transport, formation of a heterojunction, as well as good luminescence from the organic emissive layer. The device structure serves as an excellent model system for OLETs and demonstrates a general concept of adjusting the charge-carrier injection and transport, as well as the electroluminescent properties, by forming laterally arranged heterojunctions.

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