Printable Single-Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Authors

  • A. J. Baca,

    1. Department of Chemistry, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • M. A. Meitl,

    1. Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • H. C. Ko,

    1. Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • S. Mack,

    1. Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • H.-S. Kim,

    1. Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • J. Dong,

    1. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • P. M. Ferreira,

    1. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • J. A. Rogers

    1. Department of Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
    2. Department of Chemistry, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
    3. Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
    4. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
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  • We thank A. R. Banks and K. Colravy for help with processing using facilities at the Frederick Seitz Materials Research Laboratory. This material is based upon work supported by the National Science Foundation under grant DMI-0328162 and the U.S. Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439, through the Frederick Seitz MRL and Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign. A. J. Baca would like to acknowledge a graduate fellowship from the Department of Defense Science, Mathematics and Research for Transformation (SMART) fellowship program. M. A. Meitl would like to acknowledge a graduate fellowship from the Fannie and John Hertz Foundation and H. C. Ko would like to thank the Korea Research Foundation (KRF) for postdoctoral support (M01-2004-000-20283-0). A. J. Baca would like to thank Dr. Jongseung Yoon for conducting secondary ion mass spectrometry measurements.

Abstract

This article demonstrates a method for fabricating high quality single-crystal silicon ribbons, platelets and bars with dimensions between ∼ 100 nm and ∼ 5 cm from bulk (111) wafers by using phase shift and amplitude photolithographic methods in conjunction with anisotropic chemical etching procedures. This “top-down” approach affords excellent control over the thicknesses, lengths, and widths of these structures and yields almost defect-free, monodisperse elements with well defined doping levels, surface morphologies and crystalline orientations. Dry transfer printing these elements from the source wafers to target substrates by use of soft, elastomeric stamps enables high yield integration onto wafers, glass plates, plastic sheets, rubber slabs or other surfaces. As one application example, bottom gate thin-film transistors that use aligned arrays of ribbons as the channel material exhibit good electrical properties, with mobilites as high as ∼ 200 cm2 V–1 s–1 and on/off ratios > 104.

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