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Keywords:

  • Field-effect mobilities;
  • Polythiophenes;
  • Semiconductors;
  • Transistors

Abstract

Poly(4,8-didodecyl-2,6-bis-(3-methylthiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene) self-assembled on appropriate substrates from solution and formed highly structured thin films at low temperatures. As an as-prepared thin-film semiconductor without thermal annealing, it exhibited excellent field-effect transistor properties with mobility of ∼ 0.15 cm2 V–1 s–1 in thin-film transistors.