Partial financial supports of this work were provided by Natural Science and Engineering Research Council of Canada (NSERC) and Xerox Foundation.
Benzodithiophene Copolymer—A Low-Temperature, Solution-Processed High-Performance Semiconductor for Thin-Film Transistors†
Article first published online: 23 OCT 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 17, Issue 17, pages 3574–3579, November, 2007
How to Cite
Pan, H., Wu, Y., Li, Y., Liu, P., Ong, B. S., Zhu, S. and Xu, G. (2007), Benzodithiophene Copolymer—A Low-Temperature, Solution-Processed High-Performance Semiconductor for Thin-Film Transistors. Adv. Funct. Mater., 17: 3574–3579. doi: 10.1002/adfm.200601242
- Issue published online: 22 NOV 2007
- Article first published online: 23 OCT 2007
- Manuscript Revised: 26 MAR 2007
- Manuscript Received: 22 DEC 2006
- Natural Science and Engineering Research Council of Canada (NSERC)
- Xerox Foundation
- Field-effect mobilities;
Poly(4,8-didodecyl-2,6-bis-(3-methylthiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene) self-assembled on appropriate substrates from solution and formed highly structured thin films at low temperatures. As an as-prepared thin-film semiconductor without thermal annealing, it exhibited excellent field-effect transistor properties with mobility of ∼ 0.15 cm2 V–1 s–1 in thin-film transistors.