Full Paper

Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

  1. J. H. Lee,
  2. Z. M. Wang,
  3. W. T. Black,
  4. V. P. Kunets,
  5. Y. I. Mazur,
  6. G. J. Salamo

Article first published online: 29 AUG 2007

DOI: 10.1002/adfm.200700066

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 17, Issue 16, pages 3187–3193, November, 2007

Additional Information

How to Cite

Lee, J., Wang, Z., Black, W., Kunets, V., Mazur, Y. and Salamo, G. (2007), Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions. Advanced Functional Materials, 17: 3187–3193. doi: 10.1002/adfm.200700066

Author Information

  1. Materials Research in Science and Engineering Center, University of Arkansas, Fayetteville, AR 72701 (USA)

Publication History

  1. Issue published online: 29 OCT 2007
  2. Article first published online: 29 AUG 2007
  3. Manuscript Revised: 23 APR 2007
  4. Manuscript Received: 16 JAN 2007

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Keywords:

  • Patterning;
  • Quantum dots

Graphical Abstract

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Localization of quantum dots on shallow patterns regardless of crystallographic directions was achieved by combining low temperature oxide desorption and shallow GaAs buffer layer growth. Due to the high density of monolayer steps on the vicinal surfaces, adatoms preferentially incorporate on the edge of monolayer steps.

Abstract

We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based on the underlying science, this growth approach enables the localization of InAs QDs on GaAs (100) by controlling the sidewall facets and InAs monolayer coverage.

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