Organic Light Emitting Field Effect Transistors: Advances and Perspectives

Authors

  • F. Cicoira,

    1. INRS-EMT, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Quebec, J3X 1S2 (Canada)
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  • C. Santato

    1. INRS-EMT, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Quebec, J3X 1S2 (Canada)
    2. On leave from Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via Gobetti 101, 40129, Bologna, Italy
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  • The authors are grateful to the Canadian Bureau for International Education for supporting their stay in Canada and to FQRNT for partial funding of the project of Organic Electronics. This work has benefited greatly from fruitful discussions with F. Rosei, J. A. Miwa, K. Dunn (Univ. Québec, EMT-INRS), A. Bonfiglio (Università di Cagliari and S3 Modena), D. F. Perepichka, A. Ivasenko (McGill University). Present and former colleagues from ISMN and ISOF (CNR) in Bologna are acknowledged for the stimulating work done together.

Abstract

Light emitting field effect transistors based on molecular and polymeric organic semiconductors are multifunctional devices that integrate light emission with the current modulating function of a transistor. The planar geometry of organic light emitting field effect transistors (OLEFETs) offers direct access to the light emission region, providing a unique experimental configuration to investigate fundamental optical and electronic properties in organic semiconductors. OLEFETs show great potential for technological applications such as active matrix full color electroluminescent displays. In this Feature Article we review advances in OLEFETs since their first demonstration in 2003 and we highlight exciting challenges associated with their future development.

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