This material is based upon work supported in part by the STC Program of the National Science Foundation under Agreement Number DMR-0120967 and by an NSF NIRT program DMR-0303973. T. K. acknowledges funding from Lintec Corp.
A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots†
Article first published online: 31 MAR 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 18, Issue 7, pages 1112–1118, April 11, 2008
How to Cite
Kondo, T., Lee, S. M., Malicki, M., Domercq, B., Marder, S. R. and Kippelen, B. (2008), A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots. Adv. Funct. Mater., 18: 1112–1118. doi: 10.1002/adfm.200700567
- Issue published online: 18 APR 2008
- Article first published online: 31 MAR 2008
- Manuscript Revised: 7 NOV 2007
- Manuscript Received: 21 MAY 2007
- Lintec Corp.
- Nonvolatile organic memory;
- Data storage;
- Metal nanoparticles;
- Metal nanodots
We report on a single-layer organic memory device made of poly(N-vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs). Devices exhibit high ON/OFF switching ratios of 104. This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low-resistance state can be attributed to Schottky charge tunnelling through low-resistance pathways of Al particles in the polymer layer and that the high-resistance state can be controlled by charge trapping by the Al particles and Ag-NDs.