Magnetism and Phase Formation in the Candidate Dilute Magnetic Semiconductor System In2 − xCrxO3: Bulk Materials are Dilute Paramagnets


  • The authors thank the European Union for support under the NOVELOX Marie–Curie Early Stage Training programme (LB) and the EPSRC (MJR, HN, MA) for support under EPSRC/C511794. Supporting Information is available online at Wiley InterScience or from the author.


Well-characterized bulk materials in the candidate dilute magnetic semiconductor system In2 − xCrxO3 are prepared for 0 ≤ x < 0.15, with cation site preferences in the bixbyite structure identified by diffraction methods. Small ferromagnetic moments are observed; their size (<10−2 µB/dopant ion) is not consistent with bulk ferromagnetism. The resulting bulk materials display dilute paramagnetic behaviour, with all of the moment expected per Cr3+ cation dopant being involved in this paramagnetic response.