Insight into the Role of Oxygen Diffusion in the Sensing Mechanisms of SnO2 Nanowires

Authors

  • Francisco Hernandez-Ramirez,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
    2. NTEC106 S.L. C/Mare de Déu dels Desemparats 12, 08903 L'Hospitalet de Llobregat (Spain)
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  • Joan Daniel Prades,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Albert Tarancon,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Sven Barth,

    1. Department of Nanocrystalline Materials and Thin Film Systems Leibniz Institute of New Materials 66123 Saarbrücken, (Germany)
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  • Olga Casals,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Roman Jimenez-Diaz,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Eva Pellicer,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
    2. Present address: Departament de Fisica, Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
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  • Jordi Rodriguez,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Joan Ramon Morante,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
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  • Miguel Angel Juli,

    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
    2. NTEC106 S.L. C/Mare de Déu dels Desemparats 12, 08903 L'Hospitalet de Llobregat (Spain)
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  • Sanjay Mathur,

    1. Department of Nanocrystalline Materials and Thin Film Systems Leibniz Institute of New Materials 66123 Saarbrücken, (Germany)
    2. Institute of Inorganic Chemistry, University of Cologne 97074 Würzburg (Germany)
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  • Albert Romano-Rodriguez

    Corresponding author
    1. EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain)
    • EME/XaRMAE/IN2UB Departament d'Electrònica, Universitat de Barcelona C/Martí i Franquès 1, 08028 Barcelona (Spain).
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  • This work was partially supported by the EU through the project NANOS4 and by the Spanish Ministry of Education (MEC) through the projects N-MOSEN (ref. MAT2007-66741-C02-01), MAGASENS (ref. NAN2004-09380-C04-01), NAWACS (ref. NAN2006-28568-t); and CROMINA (ref. TEC2004-06854-C03-01). F. H.-R. is indebted to the MEC for the FPU grant and for the support of Torres Quevedo PTQ05-02-03201 program. OC and JDP are indebted to the MEC for the FPU grants. Thanks are due to the German Science Foundation (DFG) for supporting this work in the frame of the priority program on nanomaterials –Sonderforschungsbereich 277 –at the Saarland University, Saarbrücken, Germany. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

The role of oxygen diffusion in the response of individual SnO2 nanowires to this gas is studied. Different oxygen partial pressures lead to strong changes of their electrical resistance, even at room temperature. Since surface models fail to explain the experimentally observed long-term resistance transients, it is necessary to make a description of the interaction mechanisms between oxygen species and SnO2 nanowires by taking ion diffusion into account. Our model correctly describes the experimentally measured dependence of the nanowire resistance with oxygen partial pressure, and it can be applied to the characterization of other metal oxide materials.

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