High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis

Authors

  • Weiping Wu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Hongliang Zhang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Ying Wang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Shanghui Ye,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Yunlong Guo,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Chongan Di,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    2. Graduate University of Chinese Academy of Sciences Beijing 100039, (P.R. China)
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  • Gui Yu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
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  • Daoben Zhu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
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  • Yunqi Liu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China)
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Beijing 100080 (P.R. China).
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  • This work is supported by the National Natural Science Foundation of China (60736004, 20721061, 60671047, 50673093, 20573115), the Major State Basic Research Development Program (2006CB806200, 2006CB932103), and the Chinese Academy of Sciences. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

High-performance organic transistor memory elements with donor-polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 104, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency.

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