This work is supported by the National Natural Science Foundation of China (60736004, 20721061, 60671047, 50673093, 20573115), the Major State Basic Research Development Program (2006CB806200, 2006CB932103), and the Chinese Academy of Sciences. Supporting Information is available online from Wiley InterScience or from the author.
High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis†
Article first published online: 21 AUG 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 18, Issue 17, pages 2593–2601, September 10, 2008
How to Cite
Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. and Liu, Y. (2008), High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis. Adv. Funct. Mater., 18: 2593–2601. doi: 10.1002/adfm.200701269
- Issue published online: 5 SEP 2008
- Article first published online: 21 AUG 2008
- Manuscript Revised: 3 APR 2008
- Manuscript Received: 1 NOV 2007
Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2126/2008/adfm200701269_s.pdf or from the author.
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