This work was supported by a NSFC/RGC Joint Research Scheme (No. N_CityU 125/05) of Research Grants Council of Hong Kong SAR, China, the US Army International Technology Center – Pacific, and the National 973 projects of the Major State Research Development Program of China (Grant No. 2006CB933000 and Grant No. 2007CB936000).
Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes†
Article first published online: 28 OCT 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 18, Issue 21, pages 3515–3522, November 10, 2008
How to Cite
Tang, Y.-B., Bo, X.-H., Lee, C.-S., Cong, H.-T., Cheng, H.-M., Chen, Z.-H., Zhang, W.-J., Bello, I. and Lee, S.-T. (2008), Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes. Adv. Funct. Mater., 18: 3515–3522. doi: 10.1002/adfm.200800320
- Issue published online: 3 NOV 2008
- Article first published online: 28 OCT 2008
- Manuscript Revised: 10 JUN 2008
- Manuscript Received: 6 MAR 2008
- NSFC/RGC Joint Research Scheme (No. N_CityU 125/05) of Research Grants Council of Hong Kong SAR, China
- US Army International Technology Center – Pacific
- National 973 projects of the Major State Research Development Program of China. Grant Numbers: 2006CB933000, 2007CB936000
A new catalyst seeding method is presented, in which aerosolized catalyst nanoparticles are continuously self-assembled onto amine-terminated silicon substrates in gas phase to realize controllable synthesis of vertically aligned Mg-doped GaN nanorod arrays on n-type Si (111) substrates. The diameter, areal density, and length of GaN nanorods can be controlled by adjusting the size of Au nanoparticles, flowing time of Au nanoparticles, and growth time, respectively. Based on the synthesis of p-type GaN nanorods on n-type Si substrates, p-GaN nanorod/n-Si heterojunction diodes are fabricated, which exhibit well-defined rectifying behavior with a low turn-on voltage of ∼1.0 V and a low leakage current even at a reverse bias up to 10 V. The controllable growth of GaN nanorod arrays and the realization of p-type GaN nanorod/n-type Si heterojunction diodes open up opportunities for low-cost and high-performance optoelectronic devices based on these nanostructured arrays.