Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes

Authors

  • Yong-Bing Tang,

    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
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  • Xiang-Hui Bo,

    1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 (PR China)
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  • Chun-Sing Lee,

    Corresponding author
    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
    • Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China).
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  • Hong-Tao Cong,

    Corresponding author
    1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 (PR China)
    • Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 (PR China).
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  • Hui-Ming Cheng,

    1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 (PR China)
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  • Zhen-Hua Chen,

    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
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  • Wen-Jun Zhang,

    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
    3. Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing (PR China)
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  • Igor Bello,

    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
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  • Shuit-Tong Lee

    Corresponding author
    1. Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China)
    2. Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR (PR China)
    3. Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing (PR China)
    • Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR (PR China).
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  • This work was supported by a NSFC/RGC Joint Research Scheme (No. N_CityU 125/05) of Research Grants Council of Hong Kong SAR, China, the US Army International Technology Center – Pacific, and the National 973 projects of the Major State Research Development Program of China (Grant No. 2006CB933000 and Grant No. 2007CB936000).

Abstract

A new catalyst seeding method is presented, in which aerosolized catalyst nanoparticles are continuously self-assembled onto amine-terminated silicon substrates in gas phase to realize controllable synthesis of vertically aligned Mg-doped GaN nanorod arrays on n-type Si (111) substrates. The diameter, areal density, and length of GaN nanorods can be controlled by adjusting the size of Au nanoparticles, flowing time of Au nanoparticles, and growth time, respectively. Based on the synthesis of p-type GaN nanorods on n-type Si substrates, p-GaN nanorod/n-Si heterojunction diodes are fabricated, which exhibit well-defined rectifying behavior with a low turn-on voltage of ∼1.0 V and a low leakage current even at a reverse bias up to 10 V. The controllable growth of GaN nanorod arrays and the realization of p-type GaN nanorod/n-type Si heterojunction diodes open up opportunities for low-cost and high-performance optoelectronic devices based on these nanostructured arrays.

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