Surface-Dominated Transport Properties of Silicon Nanowires

Authors

  • Jiansheng Jie,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
    2. School of Science, Hefei University of Technology Hefei, Anhui 230009 (PR China)
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  • Wenjun Zhang,

    Corresponding author
    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
    2. Nano-Organic Photoelectronic Laboratory Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing (PR China)
    • Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China).
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  • Kuiqing Peng,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
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  • Guodong Yuan,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
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  • Chun Sing Lee,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
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  • Shuit-Tong Lee

    Corresponding author
    1. Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China)
    • Center Of Super-Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR (PR China).
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  • This work was supported by the Research Grants Council of Hong Kong SAR (CityU 3/04C and CityU 101807), the National Basic Research Program of China (973 Program) (grant no. 2006CB933000, 2007CB936000) and the National Hightech R&D Program of China (863 Program) (grant no. 2006AA03Z302). J.J. also acknowledges financial support from the National High Technology R&D Program of China (863 Program) (grant no. 2007AA03Z301).

Abstract

Surface effects are widely recognized to significantly influence the properties of nanostructures, although the detailed mechanisms are rarely studied and unclear. Herein we report for the first time a quantitative evaluation of the surface-related contributions to transport properties in nanostructures by using Si nanowires (NWs) as a paradigm. Critical to this study is the capability of synthesizing SiNWs with predetermined conduction type and carrier concentration from Si wafer of known properties using the recently developed metal-catalyzed chemical etching method. Strikingly, the conductance of p-type SiNWs is substantively larger in air than that of the original wafer, is sensitive to humidity and volatile gases, and thinner wires show higher conductivity. Further, SiNW-based field-effect transistors (FETs) show NWs to have a hole concentration two orders of magnitude higher than the original wafer. In vacuum, the conductivity of SiNWs dramatically decreases, whereas hole mobility increases. The device performances are further improved by embedding SiNW FETs in 250 nm SiO2, which insulates the devices from atmosphere and passivates the surface defects of NWs. Owing to the strong surface effects, n-type SiNWs even change to exhibit p-type characteristics. The totality of the results provides definitive confirmation that the electrical characteristics of SiNWs are dominated by surface states. A model based on surface band bending and carrier scattering caused by surface states is proposed to interpret experimental results. The phenomenon of surface-dependent transport properties should be generic to all nanoscale structures, and is significant for nanodevice design for sensor and electronic applications.

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