Selective Patterned Growth of Single-Crystal Ag–TCNQ Nanowires for Devices by Vapor–Solid Chemical Reaction

Authors

  • Kai Xiao,

    Corresponding author
    1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
    • Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA).
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  • Jing Tao,

    1. Materials Science and Technology Division Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6030 (USA)
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  • Alex A. Puretzky,

    1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
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  • Ilia N. Ivanov,

    1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
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  • Scott T. Retterer,

    1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
    2. Biosciences Division Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
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  • Stephen J. Pennycook,

    1. Materials Science and Technology Division Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6030 (USA)
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  • David B. Geohegan

    Corresponding author
    1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA)
    2. Materials Science and Technology Division Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6030 (USA)
    • Center for Nanophase Materials Sciences Oak Ridge National Laboratory 1 Bethel Valley Road, Oak Ridge, TN 37831-6488 (USA).
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  • The authors gratefully acknowledge technical assistance by Pamela Fleming, and H. N. Lee for helpful discussions. This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, US Department of Energy. HRTEM and SEAD analysis (J.T., S.J.P.) funded by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under contract DE-AC05-00OR22725 with Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

We report the deterministic growth of individual single-crystal organic semiconductor nanowires of silver–tetracyanoquinodimethane (Ag–TCNQ) with high yield (>90%) by a vapor–solid chemical reaction process. Ag–metal films or patterned dots deposited onto substrates serve as chemical reaction centers and are completely consumed during the growth of the individual or multiple nanowires. Selective-area electron diffraction (SAED) revealed that the Ag–TCNQ nanowires grow preferentially along the strong ππ stacking direction of Ag–TCNQ molecules. The vapor–solid chemical reaction process described here permits the growth of organic nanowires at lower temperatures than chemical vapor deposition (CVD) of inorganic nanowires. The single-crystal Ag–TCNQ nanowires are shown to act as memory switches with high on/off ratios, making them potentially useful in optical storage, ultrahigh-density nanoscale memory, and logic devices.

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