This work is supported by the EU-funded project OLAS (contract no. 015034). The authors thank Merck for PTAA that has been provided through the EU-funded project POLYAPPLY (contract No. 507143). S. Schols thanks the FWO Vlaanderen for financial support.
Organic Light-Emitting Diodes with Field-Effect-Assisted Electron Transport Based on α-bi;,ω-bi;-Diperfluorohexyl-quaterthiophene†
Article first published online: 4 NOV 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 18, Issue 22, pages 3645–3652, November 24, 2008
How to Cite
Schols, S., McClatchey, C., Rolin, C., Bode, D., Genoe, J., Heremans, P. and Facchetti, A. (2008), Organic Light-Emitting Diodes with Field-Effect-Assisted Electron Transport Based on α-bi;,ω-bi;-Diperfluorohexyl-quaterthiophene. Adv. Funct. Mater., 18: 3645–3652. doi: 10.1002/adfm.200800641
- Issue published online: 17 NOV 2008
- Article first published online: 4 NOV 2008
- Manuscript Revised: 23 JUL 2008
- Manuscript Received: 8 MAY 2008
- OLAS. Grant Number: 015034
- POLYAPPLY. Grant Number: 507143
- FWO Vlaanderen
Materials commonly used in the carrier transport layers of organic light-emitting diodes, where transport occurs through the bulk, are in general very different from materials used in organic field-effect transistors, where transport takes place in a very thin accumulation channel. In this paper, the use of a high-performance electron-conducting field-effect transistor material, diperfluorohexyl-substituted quaterthiophene (DFH-4T), as the electron-transporting material in an organic light-emitting diode structure is investigated. The organic light-emitting diode has an electron accumulation layer in DFH-4T at the organic hetero-interface with the host of the light-emitting layer, tris(8-hydroxyquinoline) aluminum (Alq3). This electron accumulation layer is used to transport electrons and inject them into the active emissive host-guest layer. By optimizing the growth conditions of DFH-4T for electron transport at the organic hetero-interface, high electron current densities of 750 A cm−2 are achieved in this innovative light-emitting structure.