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Synthesis, Characterization, and Field-Effect Transistor Performance of Thieno[3,2-b]thieno[2′,3′:4,5]thieno[2,3-d]thiophene Derivatives
Article first published online: 2 FEB 2009
DOI: 10.1002/adfm.200800829
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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How to Cite
Liu, Y., Wang, Y., Wu, W., Liu, Y., Xi, H., Wang, L., Qiu, W., Lu, K., Du, C. and Yu, G. (2009), Synthesis, Characterization, and Field-Effect Transistor Performance of Thieno[3,2-b]thieno[2′,3′:4,5]thieno[2,3-d]thiophene Derivatives. Adv. Funct. Mater., 19: 772–778. doi: 10.1002/adfm.200800829
Publication History
- Issue published online: 27 FEB 2009
- Article first published online: 2 FEB 2009
- Manuscript Received: 19 JUN 2008
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Keywords:
- field-effect transistors;
- organic materials;
- organic thin-film transistors
Abstract
The synthesis, characterization, and field-effect transistor (FET) properties of a new class of thieno[3,2-b]thieno[2′,3′:4,5]thieno[2,3-d]thiophene derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show π-stacked structures and intermolecular S···S contacts. These organic materials exhibit p-type FET behavior with hole mobilities as high as 0.14 cm2 V−1 s−1 and an on/off current ratio of 106. These results indicate that thieno[3,2-b]thieno [2′,3′:4,5]thieno[2,3-d]thiophene, as a linear π-conjugated system, is an effective building block for developing high-performance organic semiconductors.