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Enhancement of Carrier Mobilities of Organic Semiconductors on Sol–Gel Dielectrics: Investigations of Molecular Organization and Interfacial Chemistry Effects

Authors

  • Tommy Cahyadi,

    1. School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore)
    2. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, 738406 (Singapore)
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  • Johnson Kasim,

    1. School of Physical and Mathematical Science Nanyang Technological University 21 Nanyang Link, 637371 (Singapore)
    2. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, 738406 (Singapore)
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  • Huei Shuan Tan,

    1. School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore)
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  • Shripad R. Kulkarni,

    1. School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore)
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  • Beng S. Ong,

    1. School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore)
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  • Yiliang Wu,

    1. Xerox Research Centre of Canada, 2660 Speakman Drive Mississauga, Ontario, L5K 2L1 (Canada)
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  • Zhi-Kuan Chen,

    1. Institute of Materials Research and Engineering 3 Research Link, 117602 (Singapore)
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  • Chee Mang Ng,

    1. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, 738406 (Singapore)
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  • Ze-Xiang Shen,

    1. School of Physical and Mathematical Science Nanyang Technological University 21 Nanyang Link, 637371 (Singapore)
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  • Subodh G. Mhaisalkar

    Corresponding author
    1. School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore)
    • School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue, 639798 (Singapore).
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Abstract

The dielectric-semiconductor interfacial interactions critically influence the morphology and molecular ordering of the organic semiconductor molecules, and hence have a profound influence on mobility, threshold voltage, and other vital device characteristics of organic field-effect transistors. In this study, p-channel small molecule/polymer (evaporated pentacene and spin-coated poly(3,3‴;-didodecylquarterthiophene) – PQT) and n-channel fullerene derivative ({6}-1-(3-(2-thienylethoxycarbonyl)-propyl)-{5}-1-phenyl-[5,6]-C61 – TEPP-C61) show a significant enhancement in device mobilities ranging from ∼6 to ∼45 times higher for all classes of semiconductors deposited on sol–gel silica gate-dielectric than on pristine/octyltrichlorosilane (OTS)-treated thermally grown silica. Atomic force microscopy, synchrotron X-ray diffraction, photoluminescence/absorption, and Raman spectroscopy studies provide comprehensive evidences that sol–gel silica dielectrics-induced enhancement in both p- and n-channel organic semiconductors is attributable to better molecular ordering/packing, and hence reduced charge trapping centers due to lesser structural defects at the dielectric-semiconductor interface.

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