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A General Approach to Semimetallic, Ultra-High-Resolution, Electron-Beam Resists

Authors

  • Bao-Yu Zong,

    Corresponding author
    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
    • Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore).
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  • Gu-Chang Han,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Yuan-Kai Zheng,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Li-Hua An,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Tie Liu,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Ke-Bin Li,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Jin-Jun Qiu,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Zai-Bing Guo,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Ping Luo,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Hao-Min Wang,

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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  • Bo Liu

    1. Data Storage Institute (A*STAR) Agency for Science, Technology and Research DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
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Abstract

Commercial electron-beam resists are modified into semimetallic resists by doping with 1–3 nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5–50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

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