Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
Article first published online: 9 MAR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 19, Issue 10, pages 1609–1616, May 22, 2009
How to Cite
Kang, S. J., Bae, I., Park, Y. J., Park, T. H., Sung, J., Yoon, S. C., Kim, K. H., Choi, D. H. and Park, C. (2009), Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor. Adv. Funct. Mater., 19: 1609–1616. doi: 10.1002/adfm.200801097
- Issue published online: 18 MAY 2009
- Article first published online: 9 MAR 2009
- Manuscript Revised: 21 OCT 2008
- Manuscript Received: 30 JUL 2008
- Korea Ministry of Knowledge and Economy
- Samsung Electronics, Co., Ltd.
- Korea government (MEST)
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