Ultra Low-k Films Derived from Hyperbranched Polycarbosilanes (HBPCS)

Authors

  • Jitendra S. Rathore,

    1. Rensselaer Polytechnic Institute 2105 Empire State Hall, 110 Eighth Street Troy, NY 12180 (USA)
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  • Leonard V. Interrante,

    Corresponding author
    1. Rensselaer Polytechnic Institute 2105 Empire State Hall, 110 Eighth Street Troy, NY 12180 (USA)
    • Rensselaer Polytechnic Institute 2105 Empire State Hall, 110 Eighth Street Troy, NY 12180 (USA).
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  • Geraud Dubois

    Corresponding author
    1. Department of Advanced Organic Materials IBM Almaden Research Center 650 Harry Road, San Jose, CA 95120 (USA)
    • Department of Advanced Organic Materials IBM Almaden Research Center 650 Harry Road, San Jose, CA 95120 (USA).
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  • Financial support to R.P.I. from the New York State Office of Science, Technology and Academic Research (NYSTAR TTIP grant) is gratefully acknowledged. We also thank Dr. Pei-I. Wang (Department of Physics, RPI) for help with the dielectric and BTS measurements and to Starfire Systems, Inc. (http://www.starfiresystems.com) for donation of the hyperbranched alkoxycarbosilanes. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

Dense and porous hyperbranched carbosiloxane thin films (HBCSO) are obtained by sol–gel processing using methylene-bridged hyperbranched polycarbosilanes (HBPCSs) with the general compositional formula {(OMe)2Si(CH2)}. Introduction of porosity is achieved using a porogen templating approach, allowing the control of the films' dielectric constant from 2.9 to as low as 1.8. Over the entire dielectric range, the HBCSO films exhibit exceptional mechanical properties, 2–3 times superior to those obtained for non-alkylene bridged organosiloxanes such as methylsilsesquioxanes (MSSQs) of similar densities and k-values.

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