Solution-deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices

Authors

  • Bhola Nath Pal,

  • Phylicia Trottman,

  • Jia Sun,

  • Howard E. Katz

Errata

This article corrects:

  1. Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices Volume 18, Issue 12, 1832–1839, Article first published online: 10 June 2008

DOI: 10.1002/adfm.200701430

The following errors appear in the above article:

In Table 2, the correct values for the hole mobility are 7.44×10−2, 6.33×10−3, and 1.33×10−2 for devices 2a, 2b, and 2c, respectively.

Ancillary