Inside Front Cover: Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics (Adv. Funct. Mater. 17/2008)

Authors

  • Jong-Hyun Ahn,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University Suwon 440-746 (Korea)
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  • Zhengtao Zhu,

    1. Departments of Materials Science and Engineering Beckman Institute and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801 (USA)
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  • Sang-Il Park,

    1. Departments of Materials Science and Engineering Beckman Institute and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801 (USA)
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  • Jianliang Xiao,

    1. Department of Mechanical Engineering, Northwestern University Evanston, IL 60208 (USA)
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  • Yonggang Huang,

    1. Departments of Civil and Environmental Engineering and Mechanical Engineering, Northwestern University, Evanston, IL 60208 (USA)
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  • John A. Rogers

    Corresponding author
    1. Departments of Materials Science and Engineering Beckman Institute and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801 (USA)
    • Departments of Materials Science and Engineering Beckman Institute and Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana, IL 61801 (USA).
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Abstract

original image

The mechanics of solid nanostructures – ribbons, wires, membranes – can be important for their use in electronic and related systems. This colorized scanning electron microscopy image illustrates the ability of nanoribbons to span open trenches as discussed by Ahn et al. on page 2535. This behavior leads to improved electronic properties in transistors that incorporate gate dielectrics with pinhole or related defects, as shown in the inset data and schematic illustration.

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