Full Paper
Unraveling Deterministic Mesoscopic Polarization Switching Mechanisms: Spatially Resolved Studies of a Tilt Grain Boundary in Bismuth Ferrite
Article first published online: 12 MAY 2009
DOI: 10.1002/adfm.200900100
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Rodriguez, B. J., Choudhury, S., Chu, Y. H., Bhattacharyya, A., Jesse, S., Seal, K., Baddorf, A. P., Ramesh, R., Chen, L.-Q. and Kalinin, S. V. (2009), Unraveling Deterministic Mesoscopic Polarization Switching Mechanisms: Spatially Resolved Studies of a Tilt Grain Boundary in Bismuth Ferrite. Adv. Funct. Mater., 19: 2053–2063. doi: 10.1002/adfm.200900100
Publication History
- Issue published online: 6 JUL 2009
- Article first published online: 12 MAY 2009
- Manuscript Received: 20 JAN 2009
Funded by
- Alexander von Humboldt Foundation
Keywords:
- ferroelectrics;
- phase field modeling;
- polarization switching
Abstract
The deterministic mesoscopic mechanism of ferroelectric domain nucleation is probed at a single atomically-defined model defect: an artificially fabricated bicrystal grain boundary (GB) in an epitaxial bismuth ferrite film. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is used to map the variation of local hysteresis loops at the GB and in its immediate vicinity. It is found that the the influence of the GB on nucleation results in a slight shift of the negative nucleation bias to larger voltages. The mesoscopic mechanisms of domain nucleation in the bulk and at the GB are studied in detail using phase-field modeling, elucidating the complex mechanisms governed by the interplay between ferroelectric and ferroelastic wall energies, depolarization fields, and interface charge. The combination of phase-field modeling and SS-PFM allows quantitative analysis of the mesoscopic mechanisms for polarization switching, and hence suggests a route for unraveling the mechanisms of polarization switching at a single defect level and ultimately optimizing materials properties through microstructure engineering.

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