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Origins of Improved Hole-Injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly(dioctylfluorene-alt-benzothiadiazole)

  1. Yasuo Nakayama1,*,
  2. Katsuyuki Morii3,5,
  3. Yuuichirou Suzuki4,
  4. Hiroyuki Machida4,
  5. Satoshi Kera4,
  6. Nobuo Ueno4,
  7. Hiroshi Kitagawa3,
  8. Yutaka Noguchi2,
  9. Hisao Ishii2,*

Article first published online: 10 NOV 2009

DOI: 10.1002/adfm.200901022

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 19, Issue 23, pages 3746–3752, December 9, 2009

Additional Information

How to Cite

Nakayama, Y., Morii, K., Suzuki, Y., Machida, H., Kera, S., Ueno, N., Kitagawa, H., Noguchi, Y. and Ishii, H. (2009), Origins of Improved Hole-Injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly(dioctylfluorene-alt-benzothiadiazole). Adv. Funct. Mater., 19: 3746–3752. doi: 10.1002/adfm.200901022

Author Information

  1. 1

    Center for Frontier Science, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

  2. 2

    Center for Frontier Science and Graduate School of Advanced Integration Science Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

  3. 3

    Faculty of Science, Kyushu University CREST, Japan Science and Technology Agency 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan)

  4. 4

    Graduate School of Advanced Integration Science, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

  5. 5

    Present address: Advanced Materials Research Center, Nippon Shokubai Co., Ltd., 5-8 Nishi Otabi-cho, Suita, Osaka 564-8512, Japan

*Center for Frontier Science, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

Publication History

  1. Issue published online: 3 DEC 2009
  2. Article first published online: 10 NOV 2009
  3. Manuscript Revised: 11 AUG 2009
  4. Manuscript Received: 9 JUN 2009

Funded by

  • G-COE Program (Advanced School for Organic Electronics)
  • KAKENHI. Grant Number: 21245042
Corrected by:

Correction: Origins of Improved Hole-Injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly(dioctylfluorene-alt-benzothiadiazole)

Vol. 20, Issue 7, n/a, Article first published online: 29 MAR 2010

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Keywords:

  • Polymer light-emitting diodes;
  • Molybdenum trioxide;
  • Doping;
  • Conjugated Polymers;
  • Thin films

Abstract

The electronic structure of the interfaces formed after deposition of MoO3 hole-injection layers on top of a polymer light-emitting material, poly(dioctylfluorene-alt-benzothiadiazole) (F8BT), is studied by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy and metastable atom electron spectroscopy. Significant band bending is induced in the F8BT film by MoO3 “acceptors” that spontaneously diffuse into the F8BT “host” probably driven by kinetic energy of the deposited hot MoO3. Further deposition leads to the saturation of the band bending accompanied by the formation of MoO3 overlayers. Simultaneously, a new electronic state in the vicinity of the Fermi level appears on the UPS spectra. Since this peak does not appear in the bulk MoO3 film, it can be assigned as an interface state between the MoO3 overlayer and underlying F8BT film. Both band bending and the interface state should result from charge transfer from F8BT to MoO3, and they appear to be the origin of the hole-injection enhancement by the insertion of MoO3 layers between the F8BT light-emitting diodes and top anodes.

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