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Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate

Authors

  • Monika M. Voigt,

    Corresponding author
    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
    • Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK).
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  • Alexander Guite,

    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
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  • Dae-Young Chung,

    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
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  • Rizwan U. A. Khan,

    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
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  • Alasdair J. Campbell,

    Corresponding author
    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
    • Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK).
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  • Donal D. C. Bradley,

    1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Imperial College London, The Blackett Laboratory South Kensington Campus, London SW7 2AZ (UK)
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  • Fanshun Meng,

    1. Department of Chemistry, Imperial College London South Kensington Campus, London SW7 2AY (UK)
    2. Current address: GE (China), Research Development Center Co. Ltd., 1800 Cailun Road, Zhangjang Hightech Park, Pudong District, Shanghai 201203, P. R. China
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  • Joachim H. G. Steinke,

    1. Department of Chemistry, Imperial College London South Kensington Campus, London SW7 2AY (UK)
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  • Steve Tierney,

    1. Merck Chemicals, Chilworth Science Park Southampton SO16 7QD (UK)
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  • Iain McCulloch,

    1. Merck Chemicals, Chilworth Science Park Southampton SO16 7QD (UK)
    2. Current address: Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London SW7 2AY, UK
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  • Huguette Penxten,

    1. Institute for Material Research, Hasselt University Division IMOMEC/IMEC Wetenscharpspark 1, 3590 Depmbeck (Belgium)
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  • Laurence Lutsen,

    1. Institute for Material Research, Hasselt University Division IMOMEC/IMEC Wetenscharpspark 1, 3590 Depmbeck (Belgium)
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  • Olivier Douheret,

    1. Institute for Material Research, Hasselt University Division IMOMEC/IMEC Wetenscharpspark 1, 3590 Depmbeck (Belgium)
    2. Current address: Laboratory of Chemistry for Novel Materials, Materia Nova, Avenue Nicolas Copernic 1, 7000 Mons, Belgium
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  • Jean Manca,

    1. Institute for Material Research, Hasselt University Division IMOMEC/IMEC Wetenscharpspark 1, 3590 Depmbeck (Belgium)
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  • Ulrike Brokmann,

    1. Technische Universität Ilmenau PO Box 100 565, 98684 Ilmenau (Germany)
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  • Karin Sönnichsen,

    1. Technische Universität Ilmenau PO Box 100 565, 98684 Ilmenau (Germany)
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  • Dagmar Hülsenberg,

    1. Technische Universität Ilmenau PO Box 100 565, 98684 Ilmenau (Germany)
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  • Wolfgang Bock,

    1. Norbert Schläfli Maschinen Mühletalstr. 69, 4800 Zofingen (Switzerland)
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  • Cecile Barron,

    1. Swatch Group R&D SA – Asulab Rue des Sors 3, 2074 Marin (Switzerland)
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  • Nicolas Blanckaert,

    1. Swatch Group R&D SA – Asulab Rue des Sors 3, 2074 Marin (Switzerland)
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  • Simon Springer,

    1. Swatch Group R&D SA – Asulab Rue des Sors 3, 2074 Marin (Switzerland)
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  • Joachim Grupp,

    1. Swatch Group R&D SA – Asulab Rue des Sors 3, 2074 Marin (Switzerland)
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  • Alan Mosley

    1. IC Consultants Ltd, 58 Prince's Gate Exhibition Road, London, SW7 2PG (UK)
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Abstract

The mass production technique of gravure contact printing is used to fabricate state-of-the art polymer field-effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure-printed: the semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom-contact/top-gate geometry, an on/off ratio of >104 and a mobility of 0.04 cm2 V−1 s−1 are achieved. This rivals the best top-gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min−1 on a flexible polymer substrate demonstrates that very high-volume, reel-to-reel production of organic electronic devices is possible.

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