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Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory

Authors

  • Kang-Jun Baeg,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Republic of Korea)
    2. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Republic of Korea)
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  • Yong-Young Noh,

    Corresponding author
    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Republic of Korea)
    2. Department of Chemical Engineering Hanbat National University San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719 (Republic of Korea)
    • Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Republic of Korea).
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  • Henning Sirringhaus,

    Corresponding author
    1. Cavendish Laboratory Department of Physics University of Cambridge J. J. Thomson Avenue, Cambridge CB3 0HE (UK)
    • Cavendish Laboratory Department of Physics University of Cambridge J. J. Thomson Avenue, Cambridge CB3 0HE (UK).
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  • Dong-Yu Kim

    Corresponding author
    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Republic of Korea)
    • Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Republic of Korea).
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Abstract

Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (VTh) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (µFET) (0.02 cm2 V−1 s−1) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 104) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.

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