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Full Paper
Air-Stable n-Type Organic Field-Effect Transistors Based on Carbonyl-Bridged Bithiazole Derivatives
Article first published online: 25 FEB 2010
DOI: 10.1002/adfm.200901803
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Ie, Y., Nitani, M., Karakawa, M., Tada, H. and Aso, Y. (2010), Air-Stable n-Type Organic Field-Effect Transistors Based on Carbonyl-Bridged Bithiazole Derivatives. Adv. Funct. Mater., 20: 907–913. doi: 10.1002/adfm.200901803
Publication History
- Issue published online: 22 MAR 2010
- Article first published online: 25 FEB 2010
- Manuscript Revised: 21 NOV 2009
- Manuscript Received: 24 SEP 2009
Funded by
- New Energy and Industrial Technology Development Organization (NEDO) of Japan
- Ministry of Education, Culture, Sports, Science, and Technology, Japan
Keywords:
- Organic field-effect transistors;
- Organic electronics;
- Structure–property relationships
Abstract
An electronegative conjugated compound composed of a newly designed carbonyl-bridged bithiazole unit and trifluoroacetyl terminal groups is synthesized as a candidate for air-stable n-type organic field-effect transistor (OFET) materials. Cyclic voltammetry measurements reveal that carbonyl-bridging contributes both to lowering the lowest unoccupied molecular orbital energy level and to stabilizing the anionic species. X-ray crystallographic analysis of the compound shows a planar molecular geometry and a dense molecular packing, which is advantageous to electron transport. Through these appropriate electrochemical properties and structures for n-type semiconductor materials, OFET devices based on this compound show electron mobilities as high as 0.06 cm2 V−1 s−1 with on/off ratios of 106 and threshold voltages of 20 V under vacuum conditions. Furthermore, these devices show the same order of electron mobility under ambient conditions.