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Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution

  1. Mark-Jan Spijkman1,2,
  2. Jakob J. Brondijk1,
  3. Tom C. T. Geuns2,
  4. Edsger C. P. Smits3,
  5. Tobias Cramer4,
  6. Francesco Zerbetto4,
  7. Pablo Stoliar5,
  8. Fabio Biscarini5,
  9. Paul W. M. Blom1,3,
  10. Dago M. de Leeuw1,2,*

Article first published online: 25 FEB 2010

DOI: 10.1002/adfm.200901830

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 20, Issue 6, pages 898–905, March 24, 2010

Additional Information

How to Cite

Spijkman, M.-J., Brondijk, J. J., Geuns, T. C. T., Smits, E. C. P., Cramer, T., Zerbetto, F., Stoliar, P., Biscarini, F., Blom, P. W. M. and de Leeuw, D. M. (2010), Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution. Adv. Funct. Mater., 20: 898–905. doi: 10.1002/adfm.200901830

Author Information

  1. 1

    Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen (The Netherlands)

  2. 2

    Philips Research Laboratories, High Tech Campus 4 5656AE, Eindhoven (The Netherlands)

  3. 3

    Holst Centre, High Tech Campus 31 5656 AE Eindhoven (The Netherlands)

  4. 4

    Dipartimento di Chimica “G. Ciamcian” Università di Bologna Via F. Selmi 2, I-40126 Bologna (Italy)

  5. 5

    CNR, Institute for the Study of Nanostructured Materials Via Gobetti 101, I-40129 Bologna (Italy)

*Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4, 9747 AG, Groningen (The Netherlands).

Publication History

  1. Issue published online: 22 MAR 2010
  2. Article first published online: 25 FEB 2010
  3. Manuscript Revised: 2 NOV 2009
  4. Manuscript Received: 28 SEP 2009

Funded by

  • Dutch Polymer Institute. Grant Number: 624
  • EU projects BIODOT. Grant Numbers: NMP-TI-4-STRP 032652, ONE-P, no. 212311

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Keywords:

  • chemical sensors;
  • dual-gate transistors;
  • ion-sensitive field-effect transistors (ISFET);
  • pH;
  • threshold voltage

Abstract

Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual-gate organic transducers. The process technology is scaled up to 150-mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screening length. The mechanism is assessed by pH measurements. The threshold voltage shift depends on pH as ΔVth = (Ctop/Cbottom) × 58 mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion-sensitive field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed.

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