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Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Authors

  • Sung-Min Yoon,

    Corresponding author
    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
    • Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea).
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  • Shinhyuk Yang,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Chunwon Byun,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Sang-Hee K. Park,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Doo-Hee Cho,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Soon-Won Jung,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Oh-Sang Kwon,

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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  • Chi-Sun Hwang

    1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)
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Abstract

A fully transparent non-volatile memory thin-film transistor (T-MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and oxide semiconducting Al-Zn-Sn-O (AZTO) layers, in which thin Al2O3 is introduced between two layers. All the fabrication processes are performed below 200 °C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T-MTFT was 7.5 V with a gate voltage sweep of −10 to 10 V, and it was still 1.8 V even with a lower voltage sweep of −6 to 6 V. The field-effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm2 V−1 s−1, 0.45 V decade−1, 108, and 10−13 A, respectively. All these characteristics correspond to the best performances among all types of non-volatile memory transistors reported so far, although the programming speed and retention time should be more improved.

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