Full Paper

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

  1. Sung-Min Yoon*,
  2. Shinhyuk Yang,
  3. Chunwon Byun,
  4. Sang-Hee K. Park,
  5. Doo-Hee Cho,
  6. Soon-Won Jung,
  7. Oh-Sang Kwon,
  8. Chi-Sun Hwang

Article first published online: 22 FEB 2010

DOI: 10.1002/adfm.200902095

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 20, Issue 6, pages 921–926, March 24, 2010

Additional Information

How to Cite

Yoon, S.-M., Yang, S., Byun, C., Park, S.-H. K., Cho, D.-H., Jung, S.-W., Kwon, O.-S. and Hwang, C.-S. (2010), Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C. Adv. Funct. Mater., 20: 921–926. doi: 10.1002/adfm.200902095

Author Information

  1. Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea)

*Convergence Components and Materials Research Laboratory Electronics and Telecommunications Research Institute Yuseong-gu, Daejeon, 305-700 (Korea).

Publication History

  1. Issue published online: 22 MAR 2010
  2. Article first published online: 22 FEB 2010
  3. Manuscript Received: 8 NOV 2009

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