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Interface Modifications of InAs Quantum-Dots Solids and their Effects on FET Performance

  1. Michal Soreni-Harari1,
  2. David Mocatta2,
  3. Marina Zimin1,
  4. Yair Gannot1,
  5. Uri Banin2,
  6. Nir Tessler1,*

Article first published online: 1 MAR 2010

DOI: 10.1002/adfm.200902149

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 20, Issue 6, pages 1005–1010, March 24, 2010

Additional Information

How to Cite

Soreni-Harari, M., Mocatta, D., Zimin, M., Gannot, Y., Banin, U. and Tessler, N. (2010), Interface Modifications of InAs Quantum-Dots Solids and their Effects on FET Performance. Adv. Funct. Mater., 20: 1005–1010. doi: 10.1002/adfm.200902149

Author Information

  1. 1

    The Zisapel Nano-Electronics Center, Department of Electrical Engineering Technion–Israel Institute of Technology Technion City, Haifa 32000 (Israel)

  2. 2

    Department of Physical Chemistry The Center for Nanoscience and Nanotechnology The Hebrew University Jerusalem, 91904 (Israel)

*The Zisapel Nano-Electronics Center, Department of Electrical Engineering Technion–Israel Institute of Technology Technion City, Haifa 32000 (Israel).

Publication History

  1. Issue published online: 22 MAR 2010
  2. Article first published online: 1 MAR 2010
  3. Manuscript Received: 15 NOV 2009

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Keywords:

  • Field effect transistors (FET);
  • Nanocrystals;
  • Quantum dots;
  • Solar cells;
  • Surface modification

Abstract

InAs nanocrystals field-effect transistors with an ON/OFF ratio of 105 are reported. By tailoring the interface regions in the active layer step-by-step, the evolution of the ON/OFF ratio can be followed from approximately 5 all the way to around 105. The formation of a semiconducting solid from colloidal nanocrystals is achieved through targeted design of the nanocrystal–nanocrystal interaction. The manipulation characteristics of the nanocrystal interfaces include the matrix surrounding the inorganic core, the interparticle distance, and the order of nanocrystals in the 3D array. Through careful analysis of device characteristics following each treatment, the effect of each on the physical properties of the films are able to be verified. The enhanced performance is related to interparticle spacing, reduction in sub-gap states, and better electronic order (lower σ parameter). Films with enhanced charge transport qualities retain their quantum-confined characteristics throughout the procedure, thus making them useful for optoelectronic applications.

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