Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Authors

  • Colin Reese,

  • Zhenan Bao

Errata

This article corrects:

  1. Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors Volume 19, Issue 5, 763–771, Article first published online: 22 January 2009

No abstract is available for this article.

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