Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Authors

  • Colin Reese,

  • Zhenan Bao

Errata

This article corrects:

  1. Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors Volume 19, Issue 5, 763–771, Article first published online: 22 January 2009

DOI: 10.1002/adfm. 200801019

There is an error in Equation 4 of this manuscript. The correct equation is

equation image(1)

The authors and the editorial office apologize for any inconvenience caused.

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