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The inside cover picture shows ZnO-based thin-film transistors, grown at room temperature, integrated with a one-diode one-resistor (1D–1R) oxide-storage node elements, fabricated at room temperature. These stacked structures with stackable peripheral circuits offer the possibility of becoming a new building block applicable to high-density non-volatile memory devices with three-dimensionally stackable cross-point structures. Such an effective stacked memory concept utilizing an all-oxide-based device with peripheral circuits is necessary for future high-density non-volatile data storage.