Self-Assembled In-Plane Growth of Mg2SiO4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

Authors

  • Zhou Zhang,

    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore)
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  • Lai Mun Wong,

    1. Institute of Materials Research and Engineering Singapore 117602 (Singapore)
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  • Hou Xiao Wang,

    1. Division of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University, Singapore 639798 (Singapore)
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  • Zhi Peng Wei,

    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore)
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  • Wei Zhou,

    1. Division of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University, Singapore 639798 (Singapore)
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  • Shi Jie Wang,

    1. Institute of Materials Research and Engineering Singapore 117602 (Singapore)
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  • Tom Wu

    Corresponding author
    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore)
    • Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore)
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Abstract

In-plane growth of Mg2SiO4 nanowires on Si substrates is achieved by using a vapor transport method with Au nanoparticles as catalyst. The self-assembly of the as-grown nanowires shows dependence on the substrate orientation, i.e., they are along one, two, and three particular directions on Si (110), (100), and (111) substrates, respectively. Detailed electron microscopy studies suggest that the Si substrates participate in the formation of Mg2SiO4, and the epitaxial growth of the nanowires is confined along the Si <110> directions. This synthesis route is quite reliable, and the dimensions of the Mg2SiO4 nanowires can be well controlled by the experiment parameters. Furthermore, using these nanowires, a lithography-free method is demonstrated to fabricate nanowalls on Si substrates by controlled chemical etching. The Au nanoparticle catalyzed in-plane epitaxial growth of the Mg2SiO4 nanowires hinges on the intimate interactions between substrates, nanoparticles, and nanowires, and our study may help to advance the developments of novel nanomaterials and functional nanodevices.

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