Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory
Version of Record online: 23 AUG 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 20, Issue 18, pages 2989–3003, September 23, 2010
How to Cite
Kim, S. K., Lee, S. W., Han, J. H., Lee, B., Han, S. and Hwang, C. S. (2010), Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory. Adv. Funct. Mater., 20: 2989–3003. doi: 10.1002/adfm.201000599
- Issue online: 14 SEP 2010
- Version of Record online: 23 AUG 2010
- Manuscript Received: 29 MAR 2010
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