Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors
Version of Record online: 23 AUG 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 20, Issue 20, pages 3457–3465, October 22, 2010
How to Cite
Gwinner, M. C., Vaynzof, Y., Banger, K. K., Ho, P. K. H., Friend, R. H. and Sirringhaus, H. (2010), Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors. Adv. Funct. Mater., 20: 3457–3465. doi: 10.1002/adfm.201000785
- Issue online: 20 OCT 2010
- Version of Record online: 23 AUG 2010
- Manuscript Received: 22 APR 2010
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