An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices

Authors

  • Chih-Yin Kuo,

    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
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  • Ming-Shin Su,

    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
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  • Yu-Chien Hsu,

    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
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  • Hui-Ni Lin,

    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
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  • Kung-Hwa Wei

    Corresponding author
    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
    • Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China.
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Abstract

A thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)–containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT:PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm−2), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.

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