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Stretchable, Transparent Zinc Oxide Thin Film Transistors

Authors

  • Kyungyea Park,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Deok-Kyou Lee,

    1. School of Mechanical Engineering, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Byung-Sung Kim,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Haseok Jeon,

    1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Nae-Eung Lee,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Dongmok Whang,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Hoo-Jeong Lee,

    1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Youn Jea Kim,

    1. School of Mechanical Engineering, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Jong-Hyun Ahn

    Corresponding author
    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
    • School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea.
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Abstract

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.

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