Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection

Authors

  • Yanbo Li,

    1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan)
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  • Takero Tokizono,

    1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan)
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  • Meiyong Liao,

    1. Sensor Materials Center, National Institute for Materials Sciences (NIMS), Namiki 1–1, Tsukuba, Ibaraki, 305–0044 (Japan)
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  • Miao Zhong,

    1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan)
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  • Yasuo Koide,

    1. Sensor Materials Center, National Institute for Materials Sciences (NIMS), Namiki 1–1, Tsukuba, Ibaraki, 305–0044 (Japan)
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  • Ichiro Yamada,

    1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan)
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  • Jean-Jacques Delaunay

    Corresponding author
    1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan)
    • Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7–3-1 Hongo, Bunkyo-ku, Tokyo, 113–8656 (Japan).
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Abstract

An increasing number of applications using ultraviolet radiation have renewed interest in ultraviolet photodetector research. Particularly, solar-blind photodetectors sensitive to only deep UV (<280 nm), have attracted growing attention because of their wide applicability. Among recent advances in UV detection, nanowire (NW)-based photodetectors seem promising, however, none of the reported devices possesses the required attributes for practical solar-blind photodetection, namely, an efficient fabrication process, a high solar light rejection ratio, a low photocurrent noise, and a fast response. Herein, the assembly of β-Ga2O3 NWs into high-performance solar-blind photodetectors by use of an efficient bridging method is reported. The device is made in a single-step chemical vapor deposition process and has a high 250-to-280-nm rejection ratio (∼2 × 103), low photocurrent fluctuation (<3%), and a fast decay time (<<20 ms). Further, variations in the synthesis parameters of the NWs induce drastic changes in the photoresponse properties, which suggest a possibility for tuning the performance of the photodetectors. The efficient fabrication method and high performance of the bridged β-Ga2O3 NW photodetectors make them highly suitable for solar-blind photodetection.

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