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Branched Silicon Nanotubes and Metal Nanowires via AAO-Template-Assistant Approach

Authors

  • Bensong Chen,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
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  • Qiaoling Xu,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
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  • Xianglong Zhao,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
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  • Xiaoguang Zhu,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
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  • Mingguang Kong,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
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  • Guowen Meng

    Corresponding author
    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
    • Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China.
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Abstract

Branched and multi-generation branched architectures of silicon nanotubes (SiNTs) and metal nanowires (NWs), built via filling the branched and multi-generation-branched nanochannels of anodic aluminum oxide (AAO) templates by pyrolysis of silane and electrodeposition of metals, are reported. The AAO templates with branched and multi-generation-branched nanochannels are created by sequentially reducing the applied anodizing voltage multiple times during the anodization of aluminum. The desired total generation number of branching can be controlled by the times of voltage reduction during the anodization; while each generation of branching is controlled in terms of branching number, diameter and length. The approach allows precise control over the complexity of the SiNTs and metal NWs with several levels of junctions and branching that have potentials in nanoelectronics, nanomagnetism and nanosystems.

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