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Keywords:

  • infrared;
  • photodetector;
  • lead;
  • blocking;
  • nanocrystal

Abstract

A PbSe solution-processed nanocrystal-based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 1012 Jones are achieved by using poly[(9,9′-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butyl))diphenylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer.