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Keywords:

  • anisotropic growth;
  • galvanic reaction;
  • metal nanoplates;
  • semiconductor wafers

Abstract

Growth of anisotropic metal nanostructures with well-defined shapes on large-area semiconductor substrates represents a challenge to synthesize hybrid materials with complex functionalities. This Feature Article highlights the approach recently developed in our group for growing nanoplates made of noble metals (e.g., Ag, Pd, Au/Ag alloy) on semiconductor wafers (e.g., GaAs and Si), which are widely used in the semiconductor industry. In the typical syntheses, only the semiconductor wafers and pure aqueous solutions of metal precursors are involved in the reaction. The absence of surfactant molecules, organic solvents, catalysts, etc. in the syntheses makes this strategy suitable for the formation of metal/semiconductor hybrid materials with clean metal/semiconductor interfaces. The mechanism for the selective growth of metal nanoplates on semiconductor substrates is extensively discussed. The as-grown metal nanoplates protrude out of the substrates to expose most of their surface areas to the surrounding environment, leading to be favorable for some applications, such as catalysis and surface-enhanced Raman scattering.