Soft Nanolithography by Polymer Fibers

Authors

  • Deyu Tu,

    1. National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy
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  • Stefano Pagliara,

    1. National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy
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  • Andrea Camposeo,

    1. National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy
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  • Giovanni Potente,

    1. National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy
    2. Istituto Superiore di Formazione Interdisciplinare ISUFI Università del Salento via Arnesano, I-73100 Lecce, Italy
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  • Elisa Mele,

    1. Istituto Italiano di Tecnologia (I.I.T.), Center for Biomolecular Nanotechnologies, via Barsanti 1, I-73010, Arnesano, Lecce, Italy
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  • Roberto Cingolani,

    1. Istituto Italiano di Tecnologia (I.I.T.), via Morego 30, I-16163, Genova, Italy
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  • Dario Pisignano

    Corresponding author
    1. National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy
    2. Dipartimento di Ingegneria dell’Innovazione, Università del Salento, via Arnesano, I-73100 Lecce, Italy
    • National Nanotechnology Laboratory of Consiglio Nazionale delle, Ricerche-Istituto Nanoscienze, Università del Salento, via Arnesano, I-73100 Lecce, Italy.
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Abstract

We report on the use of polymer fibers for large-area soft nanolithography on organic and inorganic surfaces with 50 nm resolution. The morphology of fibers and of the corresponding patterned gap is investigated, demonstrating a lateral dimension downscaling of up to nine times, which greatly increases the achieved resolution during pattern transfer. In this way, we realize poly­mer field effect transistors with channel length and width as low as 250 nm that are expected to show transistor transition frequency up to a few MHz, and are thus exploitable as low-cost radio-frequency identification devices.

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