• organic field-effect transistors;
  • polymer dielectrics;
  • low voltage operation;
  • N,N- ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI–C13);
  • triethylsilylethynyl anthradithiophene (TES–ADT)


A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane-terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic-oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS-coupled SiO2 or AlOx dielectrics, various vacuum- and solution-processable organic semiconductors can develop highly ordered crystalline structures that provide higher field-effect mobilities (μFETs) than other surface-modified systems, and negligible hysteresis in organic field-effect transistors (OFETs). In particular, the use of PS-coupled AlOx nanodielectrics enables a solution-processable triethylsilylethynyl anthradithiophene OFET to operate with μFET ∼ 1.26 cm2 V−1 s−1 at a gate voltage below –1 V. In addition, a complementary metal-oxide semiconductor-like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS-coupled SiO2 dielectric.