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Physicochemically Stable Polymer-Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

Authors

  • Se Hyun Kim,

    1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, South Korea
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  • Mi Jang,

    1. Department of Advanced Fiber Engineering, Inha University, Incheon 402-751, South Korea
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  • Hoichang Yang,

    Corresponding author
    1. Department of Advanced Fiber Engineering, Inha University, Incheon 402-751, South Korea
    • Department of Advanced Fiber Engineering, Inha University, Incheon 402-751, South Korea
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  • John E. Anthony,

    Corresponding author
    1. Department of Chemistry, University of Kentucky, KY 40506, USA
    • Department of Chemistry, University of Kentucky, KY 40506, USA.
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  • Chan Eon Park

    Corresponding author
    1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, South Korea
    • Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, South Korea
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Abstract

A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane-terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic-oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS-coupled SiO2 or AlOx dielectrics, various vacuum- and solution-processable organic semiconductors can develop highly ordered crystalline structures that provide higher field-effect mobilities (μFETs) than other surface-modified systems, and negligible hysteresis in organic field-effect transistors (OFETs). In particular, the use of PS-coupled AlOx nanodielectrics enables a solution-processable triethylsilylethynyl anthradithiophene OFET to operate with μFET ∼ 1.26 cm2 V−1 s−1 at a gate voltage below –1 V. In addition, a complementary metal-oxide semiconductor-like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS-coupled SiO2 dielectric.

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