Full Paper
Wafer-Level Self-Organized Copolymer Templates for Nanolithography with Sub-50 nm Feature and Spatial Resolutions
Article first published online: 25 FEB 2011
DOI: 10.1002/adfm.201002380
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Krishnamoorthy, S., Manipaddy, K. K. and Yap, F. L. (2011), Wafer-Level Self-Organized Copolymer Templates for Nanolithography with Sub-50 nm Feature and Spatial Resolutions. Adv. Funct. Mater., 21: 1102–1112. doi: 10.1002/adfm.201002380
Publication History
- Issue published online: 18 MAR 2011
- Article first published online: 25 FEB 2011
- Manuscript Revised: 1 DEC 2011
- Manuscript Received: 11 NOV 2010
Keywords:
- nanolithography;
- self-assembly;
- block copolymers;
- Si nanopillar arrays;
- reflectance
Abstract
Robust lithographic templates, with sub-50 nm feature and spatial resolutions, that exhibit high patterning integrity across a full-wafer are demonstrated using self-organized copolymer reverse micelles on 100 mm Si wafers. A variation of less than 5% in the feature size and periodicity of polymeric templates across the entire wafer is achieved simply by controlling the spin-coating process. Lithographic pattern transfer using these templates yields Si nanopillar arrays spanning the entire wafer surface and exhibiting high uniformity inherited from the original templates. The variation in geometric characteristics of the pillar arrays across the full-wafer surface is validated to be less than 5% using reflectance spectroscopy. The physical basis of the change in reflectance with respect to sub-10 nm variations in geometric parameters of pillar arrays is shown by theoretical modelling and simulations. Successful fabrication of highly durable TiO2 masks for nanolithography with sub-50 nm feature width and spatial resolutions is achieved through highly controlled vapour phase processing of reverse micelle templates. This allows lithographic pattern-transfer of organic templates with a feature thickness and separation of less than 10 nm, which is otherwise not possible through other approaches reported in literature.

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