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An Electrically Tuned Solid-State Thermal Memory Based on Metal–Insulator Transition of Single-Crystalline VO2 Nanobeams

Authors

  • Rongguo Xie,

    1. Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
    2. Centre for Computational Science and Engineering (CCSE), National University of Singapore, Singapore, 117456, Republic of Singapore
    3. Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Republic of Singapore
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  • Cong Tinh Bui,

    1. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Republic of Singapore
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  • Binni Varghese,

    1. Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
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  • Qingxin Zhang,

    1. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Republic of Singapore
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  • Chorng Haur Sow,

    1. Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
    2. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Republic of Singapore
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  • Baowen Li,

    Corresponding author
    1. Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
    2. Centre for Computational Science and Engineering (CCSE), National University of Singapore, Singapore, 117456, Republic of Singapore
    3. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Republic of Singapore
    • Department of Physics, National University of Singapore, Singapore, 117542, Republic of Singapore
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  • John T. L. Thong

    Corresponding author
    1. Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Republic of Singapore
    2. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Republic of Singapore
    • Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Republic of Singapore.
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Abstract

A solid-state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single-crystal VO2 nanobeam is used, undergoing a metal–insulator transition at ∼340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased ∼60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid-state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano- to macroscale thermal management.

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