Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature Electronics

Authors

  • Tian Pei,

    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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  • Zhiyong Zhang,

    Corresponding author
    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
    • Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
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  • Zhenxing Wang,

    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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  • Li Ding,

    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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  • Sheng Wang,

    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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  • Lian-Mao Peng

    Corresponding author
    1. Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
    • Wang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
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Abstract

High-performance top-gate carbon nanotube (CNT) field-effect transistors (FETs) have been fabricated via a doping-free fabrication process in which the polarity of the CNT FET is controlled by the injection of carriers from the electrodes, instead of using dopants. The performance of the doping-free CNT FETs is systemically investigated over a wide temperature range, from very low temperatures of down to 4.3 K up to 573 K, and analyzed using several temperature-dependent key device parameters including the ON/OFF state current and ratio, carrier mobility, and subthreshold swing. It is demonstrated that for ballistic and quasi-ballistic CNT FETs, the operation of the CNT FETs is largely independent of the presence of dopant, thus avoiding detrimental effects due to dopant freeze-out at low temperature and dopant diffusion at high temperature, and making it possible to use doping-free CNT FETs in both low- and high-temperature electronics. A new method is also proposed for extracting the band-gap and diameter of a semiconducting CNT from the temperature dependent OFF-state current and shown to yield results that are consistent with AFM measurements.

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